PMZB950UPE Datasheet, NXP Semiconductors

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* Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic package: 1.0 × 0.6 × 0.37 mm ElectroStatic Discharge (ESD) protection > 1.

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* Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
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* Trench MOSFET techn.